A high-performance ion implantation system series for semiconductor devices
SOPHI-400 is a cluster type, high-energy ion implanter applicable to 2400 keV.
This tool, SOPHI-200/260, basically inherits exisiting medium current production model ion implanter, and remove over specification based on our sufficient experience as tool supplier.
SOPHI-30, cluster type low-acceleration and high-density ion implanter, has no mass separator and supports thin wafers.
Ion Implanter for mass production with high temp ESC for SiC.